Observation of a C-Core Exciton in Diamond
- 29 April 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (17), 1960-1963
- https://doi.org/10.1103/physrevlett.54.1960
Abstract
A well-resolved core exciton at the bulk diamond C- absorption edge has been observed using high-resolution partial-yield spectroscopy with synchrotron radiation. The obtained excitonic binding energy, 0.19±0.015 eV, agrees well with a first-principles effective-mass approximation (EMA). This is in sharp contrast to other semiconductors (Si, Ge, and GaAs) where reported excitonic shifts far exceed EMA estimates. In light of these results, one must question whether previous measurements overestimate the core-hole interaction or if they indicate a breakdown of the EMA for core excitons.
Keywords
This publication has 32 references indexed in Scilit:
- Coppernear-edge structure inOPhysical Review B, 1984
- Core excitons in solidsApplied Optics, 1980
- Fine structure and temperature dependence of shallow core excitons in insulators and semiconductorsApplied Optics, 1980
- Binding energies of core excitons in semiconductorsIl Nuovo Cimento B (1971-1996), 1979
- Photoemission Studies of 2p Core Levels of Pure and Heavily Doped SiliconPhysica Status Solidi (b), 1978
- Modulation spectroscopy in the far UVIl Nuovo Cimento B (1971-1996), 1977
- Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)Physical Review Letters, 1974
- New Interpretation of the Soft-X-Ray Absorption Spectra of Several Alkali HalidesPhysical Review Letters, 1974
- Core Exciton and Band Structure in LiFPhysical Review Letters, 1974
- Extreme Ultraviolet Transmission of Crystalline and Amorphous SiliconPhysical Review Letters, 1972