Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S), 1387
- https://doi.org/10.1143/jjap.34.1387
Abstract
Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiO2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. The formed oxidized titanium line has resistivity of 2×104 ohm cm, which is a value seven orders of magnitude higher than that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found to be δE g=0.25 eV.Keywords
This publication has 4 references indexed in Scilit:
- Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscopeApplied Physics Letters, 1994
- Fabrication of Si nanostructures with an atomic force microscopeApplied Physics Letters, 1994
- Nanofabrication of Titanium Surface by Tip-Induced Anodization in Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 1993
- Pattern generation on semiconductor surfaces by a scanning tunneling microscope operating in airJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991