Oxygen Adsorption on Silicon and Germanium

Abstract

Data are presented which yield relative magnitudes of the initial, room‐temperature sticking probabilities S₀ of nitrogen on clean tungsten and oxygen on clean silicon and germanium. Taking S₀ to be 0.35 for N₂ on W, we obtain 1×10⁻² and 8×10⁻⁴ for S₀ of O₂ on Si and Ge, respectively. Data are also given concerning the temperatures at which the atomically clean surface is thermally regenerated from the oxygenated surface for both Si and Ge.