Frequency-domain study of trapping dynamics in SIGaAs
- 20 November 1983
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 16 (32), L1159-L1164
- https://doi.org/10.1088/0022-3719/16/32/004
Abstract
A novel technique for the measurement of the dynamic response of deep levels in semiconductors, is described, using a modulated light source and a frequency response analyser. Its advantages vis-a-vis the conventional time domain method are pointed out. The response of Cr-doped semi-insulating gallium arsenide is measured over 51/2 decades of frequency in the range 315-375K and is found to correspond to power-law time dependence instead of the normally expected exponential law.Keywords
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