Section de capture des trous sur le niveau Ev + 0,34 eV de Si : Pt
- 1 January 1980
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 15 (4), 843-848
- https://doi.org/10.1051/rphysap:01980001504084300
Abstract
La section efficace de capture thermique des trous sur le centre à Ev + 0,34 eV associé au platine dans le silicium est déduite de la dépendance temporelle de la densité des centres profonds ionisés, mesurée par technique capacitive. Pour le domaine de température [77 K, 120 K], le résultat est $$
Keywords
This publication has 10 references indexed in Scilit:
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- Thermal capture cross-section of free electrons at neutral gold centres in n-type siliconphysica status solidi (a), 1976
- Electrical properties of platinum in silicon as determined by deep-level transient spectroscopyJournal of Applied Physics, 1976
- Energy levels for platinum and palladium in silicon measured by the dark transient capacitance techniquephysica status solidi (a), 1976
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriersApplied Physics Letters, 1972
- Frequency Response of Gold Impurity Centers in the Depletion Layer of Reverse-Biased Silicon p+n JunctionsJournal of Applied Physics, 1972
- Electrical properties of silicon doped with platinumSolid-State Electronics, 1970
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968