A transmission electron microscopy study of the defect microstructure of Al2O3, subjected to ion bombardment
- 1 January 1979
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 42 (3-4), 129-144
- https://doi.org/10.1080/00337577908209130
Abstract
The defect microstructure induced in single-crystal aluminum oxide by bombardment with high-energy ions has been studied by transmission electron microscopy (TEM). The effects of the irradiation temperature, the type of ion used for irradiation, and the presence of inert gas atoms upon the microstructure were examined in detail. The intrinsic, displacement-induced defect structures which resulted from ion bombardment appeared quite similar to the microstructures of aluminum oxide subjected to fast neutron or high energy electron irradiation at similar temperatures and doses. The most significant changes in the microstructure were caused by bombardment with helium ions. Implantation of helium into alumina at low temperature followed by annealing at high temperature resulted in the formation of a dense dislocation network. The large number of defects required to account for this network may have arisen from strong trapping of helium by radiation-induced vacancies, which left a large population of interstitials to collect into loops.Keywords
This publication has 19 references indexed in Scilit:
- On the nature of features seen by tem in fast neutron irradiated Al2O3Journal of Nuclear Materials, 1978
- The Dominant Type of Atomic Disorder in α‐Al2O3Journal of the American Ceramic Society, 1978
- ESR investigation of molecular ions in SrOPhysical Review B, 1977
- Neutron‐Irradiation Damage in Stabilized ZrO2Journal of the American Ceramic Society, 1977
- Unsafe orientations for the characterisation of dislocation loops using transmission electron microscopyPhysica Status Solidi (a), 1976
- Neutron Damage in Single Crystal Aluminum OxideJournal of the American Ceramic Society, 1968
- On the nature of dislocation loops in neutron irradiated sapphireMaterials Research Bulletin, 1967
- Dislocation Loops in Oxygen-Ion-Irradiated SapphireJournal of Applied Physics, 1966
- Electron Microscopy of Dislocations and Other Defects in Sapphire and in Silicon Carbide, Thinned by SputteringPhysica Status Solidi (b), 1965
- Threshold Energy for Lattice Displacement in-Physical Review Letters, 1960