Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon
- 1 February 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (3), 1322-1330
- https://doi.org/10.1063/1.372017
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling onPhysical Review B, 1998
- Silicon Epoxide: Unexpected Intermediate during Silicon Oxide FormationPhysical Review Letters, 1998
- Interface structure between silicon and its oxide by first-principles molecular dynamicsNature, 1998
- Dynamical Charge Tensors and Infrared Spectrum of AmorphousPhysical Review Letters, 1997
- Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfacesApplied Surface Science, 1997
- Origin of the High-Frequency Doublet in the Vibrational Spectrum of Vitreous SiO 2Science, 1997
- Structural nature of the Si/SiO2 interface through infrared spectroscopyApplied Physics Letters, 1996
- Analysis of the vibrational mode spectra of amorphous SiO2 filmsJournal of Applied Physics, 1995
- Surface infrared spectroscopySurface Science Reports, 1988
- Band limits and the vibrational spectra of tetrahedral glassesPhysical Review B, 1979