Characterization of an Ultra-Hard CMOS 64K Static RAM

Open Access

1 January 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 34 (6), 1455-1459
https://doi.org/10.1109/TNS.1987.4337497

Abstract

We have irradiated radiation-hard 64K CMOS Static RAMs in a 60Co pool at dose rates of 3 and 70 Rads-(SiO2)/sec to simulate a space radiation environment. The devices failed due to write-failure at a total gamma dose in some cases greater than 50 MRads(SiO2). Test Transistors were also irradiated and measured.

Keywords

TESTING
SEMICONDUCTOR DEVICE MEASUREMENT
RANDOM ACCESS MEMORY
TIME MEASUREMENT
PERFORMANCE EVALUATION
VOLTAGE
READ-WRITE MEMORY
LABORATORIES
FAILURE ANALYSIS
BONDING

This publication has 1 reference indexed in Scilit:

Correlating the Radiation Response of MOS Capacitors and Transistors
IEEE Transactions on Nuclear Science, 1984

Cited by 2 articles