Effects of diffusion-induced dislocations on the excess low-frequency noise

Abstract

This paper discusses the device characteristics of the emitter-base junction, linearity of the static forward-current transfer ratio, and excess low-frequency noise in bipolar transistors by use of gate-controlled n-p-n transistors fabricated by varying the deposition rate of phosphosilicate glass in the emitter deposition. As a result of increasing the deposition rate of phosphosilicate glass, the following results were obtained. 1) Diffusion-induced dislocations and emitter edge dislocations extended from the emitter through the collector and their densities increased. 2) Diode reverse current of the emitter-base junction increased. 3) Linearity of the static forward-current transfer ratio was reduced at low current level. 4) Excess low-frequency noise increased.