Field effect and thermoelectric power on arsenic-doped amorphous silicon
- 1 January 1979
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 8 (1), 47-56
- https://doi.org/10.1007/bf02655640
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Substitutional doping in amorphous semiconductors the As-Si systemPhilosophical Magazine, 1976
- Field-effect measurements in disordered As30Te48Si12Ge10and As2Te3Philosophical Magazine, 1976
- Amorphous silicon p-n junctionApplied Physics Letters, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975