Defects in electron-irradiated germanium
- 1 December 1976
- journal article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 34 (6), 1057-1071
- https://doi.org/10.1080/00318087608227728
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Contrast and resolution of small dislocation loops in high-voltage electron microscopyPhysica Status Solidi (a), 1975
- Comments on KOH contamination of Ge crystal surfacePhysica Status Solidi (a), 1973
- On the annealing of damage produced by boron ion implantation of silicon single crystalsRadiation Effects, 1971
- Damage produced by ion mplantation in siliconRadiation Effects, 1970
- On the temperature rise in electron irradiated foilsRadiation Effects, 1970
- The distribution of condensed defect structures formed in annealed boron-implanted siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969
- The influence of boron on the clustering of radiation damage in graphitePhilosophical Magazine, 1969
- Electron microscopic observation of neutron-irradiated germaniumPhilosophical Magazine, 1969
- Direct observations of ion damage in germaniumIl Nuovo Cimento B (1971-1996), 1965
- On diffraction contrast from inclusionsPhilosophical Magazine, 1963