"Size Effect" in Electrical Resistivity Measurements on Single Crystals of High-Purity Tin at Liquid Helium Temperatures

Abstract

The "size effect" in the electrical resistivity of a single crystal of high purity tin has been observed by reducing the cross-sectional area of the crystal by chemical etching. Assuming 100% diffuse scattering of the electrons at the boundaries, the mean free path is 0.45 mm, $\frac{R_{4.2°\mathrm{K}}}{R_{273°\mathrm{K}}}=3.5\mathrm{}\times {10}^{-5\mathrm{}}$, and $\rho l=2.3\mathrm{}\times {10}^{-11\mathrm{}}$ ohm ${\mathrm{cm}}^2$ along the $c$ axis.