160°C CW operation of InGaAs/GaAs vertical cavity surface emitting lasers
- 3 March 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (5), 409-410
- https://doi.org/10.1049/el:19940265
Abstract
A CW operation temperature of 160 °C is demonstrated in InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELS). The effect of offset-gain is considered in the design, and wet chemical etching is employed for forming the mesastructure to reduce surface recombination. A low threshold current of 5.2 mA is achieved at 160 °C.This publication has 7 references indexed in Scilit:
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