Defect formation observed by AES in a‐SiO2 films prepared by photochemical vapour deposition
- 1 July 1990
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 16 (1-12), 435-439
- https://doi.org/10.1002/sia.740160190
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Two types of oxygen-deficient centers in synthetic silica glassPhysical Review B, 1988
- Two-photon processes in defect formation by excimer lasers in synthetic silica glassApplied Physics Letters, 1988
- Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes: Defect structures and deposition mechanismJournal of Applied Physics, 1988
- Application of elastic peak electron spectroscopy (EPES) to determine inelastic mean free paths (IMFP) of electrons in copper and silverSurface and Interface Analysis, 1988
- UV and VUV Optical Absorption due to Intrinsic and Laser Induced Defects in Synthetic Silica GlassesPublished by Springer Nature ,1988
- Defects and Their Control in SiO2 Films Prepared by D2 –Lamp Photochemical Vapor DepositionMRS Proceedings, 1988
- A study of chemical bonding in suboxides of silicon using Auger electron spectroscopyJournal of Vacuum Science & Technology A, 1986
- Photon-Induced Oxygen Loss in Thin SiFilmsPhysical Review Letters, 1984
- AUGER SPECTRA OF SiO2 SURFACE DEFECT CENTERSPublished by Elsevier ,1978
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971