A correlation between the electrical breakdown of silicon bipolar transistors and impurity precipitates
- 1 March 1980
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 118 (3), 315-320
- https://doi.org/10.1111/j.1365-2818.1980.tb00279.x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electron microscope study of electrically active impurity precipitate defects in siliconPhilosophical Magazine, 1974
- Relationship Between Process-Induced Defects and Soft P-N Junctions in Silicon DevicesJournal of the Electrochemical Society, 1974
- Constitution of Binary AlloysJournal of the Electrochemical Society, 1958