X-ray study on impurity diffusion in a GaAs-AlAs superlattice
- 15 May 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (10), 971-973
- https://doi.org/10.1063/1.94615
Abstract
The mechanism of Zn diffusion in a GaAs-AlAs superlattice has been studied by measuring the x-ray satellite intensity. The satellite intensity decreases and its width increases with increasng annealing time. The local structure around Zn atom is discussed.Keywords
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