Oxidation of amorphous silicon and germanium: Photoemission evidence for high oxidation states
- 15 April 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8), 3195-3196
- https://doi.org/10.1063/1.333355
Abstract
We made a direct comparison between amorphous and crystalline Ge surfaces exposed to equal amounts of activated oxygen. On amorphous Ge we found a larger average number of oxygen atoms around each oxidized substrate atom than on crystalline Ge. Similar conclutions were reached for the oxidation of crystalline and amorphous Si.Keywords
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