Non-Lorentzian Noise at Semiconductor Interfaces

Abstract

Electrical noise at silicon grain boundaries deviates significantly from Lorentzian behavior. The noise shows a $\frac{1}{f}$ dependence over a wide frequency range. We present a new model to explain this behavior quantitatively. Our model is based on generation and recombination of charge carriers at interface states and explicitly takes into account inhomogeneities within the boundary plane. Such inhomogeneities generally cause deviations from Lorentzian spectra. The quantitative analysis allows us to characterize these interface states.