Improved Performance and Reliability of MOSFETs with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O Ambient
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
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This publication has 1 reference indexed in Scilit:
- Large peak current densities in novel resonant interband tunneling heterostructuresApplied Physics Letters, 1990