Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
- 1 June 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (6A), L335
- https://doi.org/10.1143/jjap.21.l335
Abstract
Clear correlation between dislocation distribution and FET threshold voltage distribution in undoped LEC GaAs was observed directly for the first time by automatic computer-controlled measurement of drain-source current (I ds) and threshold voltage (V th). FETs fabricated in the high EPD area, which covers the center and the periphery of (100) wafers, showed high I ds and low V th, whereas FETs fabricated in the low EPD area showed low I ds and high V th.Keywords
This publication has 4 references indexed in Scilit:
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