A characterization technique for second breakdown in Ge alloyed junction transistors
- 1 August 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (8/9), 648-650
- https://doi.org/10.1109/t-ed.1966.15753
Abstract
A characterization technique for second breakdown in Ge p-n-p alloyed junction transistors with the open base condition is described. This method is based on the saturated characteristics which are expressed in the form of exponential dependence on the slope of the rising part of the applied voltage. Using this method, a comparison is made of transistor SB characteristics in terms of device characteristics, such as BVCEOand HFE.Keywords
This publication has 5 references indexed in Scilit:
- The second breakdown V-I characteristics in the triple diffused Si transistorProceedings of the IEEE, 1965
- Secondary breakdown in transistorsProceedings of the IEEE, 1964
- An aspect of second breakdown in transistorsProceedings of the IEEE, 1964
- "Second breakdown" in transistorsIRE Transactions on Electron Devices, 1962
- A new high current mode of transistor operationIRE Transactions on Electron Devices, 1958