Defect-concentration dependence of the spin-density-wave transport in the organic conductor (TMTSF $)_{2}$ ${PF}_{6}$ (TMTSF=tetra- methyltetraselenafulvalene)

1 January 1991

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 43 (1), 1264-1267
https://doi.org/10.1103/physrevb.43.1264

Abstract

We have studied the effects of chemical impurities and x-ray irradiation-induced defects on the electric-field-dependent conductivity in the spin-density-wave (SDW) state of the organic conductor (TMTSF

)_{2}

{PF}_{6}

. For a large number of nominally pure samples the temperature dependence of the threshold field agrees with theoretical predictions that assume weak coupling between the SDW and chemical impurities. For irradiated samples the threshold field increases linearly with the defect concentration and its temperature dependence corresponds to that expected in the strong-coupling limit.

Keywords

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Cited by 24 articles

Defect-concentration dependence of the spin-density-wave transport in the organic conductor (TMTSF)2PF6(TMTSF=tetra- methyltetraselenafulvalene)

Abstract

Keywords

Defect-concentration dependence of the spin-density-wave transport in the organic conductor (TMTSF $)_{2}$ ${PF}_{6}$ (TMTSF=tetra- methyltetraselenafulvalene)