The discontinuous growth modes of zinc selenide deposited upon clean, restructured and oxygen-stabilized (100) germanium surfaces

Abstract

A study has been made of the growth behaviour of zinc selenide deposited from the vapour phase on to (100) germanium surfaces. The deposition has been performed upon clean, restructured Ge (100) 2*2 and ordered, oxygen covered Ge (100) 1*1 surface structures in conditions of ultra-high vacuum (10^-9-10^-10 Torr). Prior to deposition the germanium surfaces were assessed with low-energy-electron diffraction and Auger electron spectroscopy. An investigation has then been made of the influences that substrate temperature, substrate contamination (specifically oxygen) and degree of vapour saturation have in controlling the growth behaviour of zinc selenide deposited on to these structurally ordered germanium surfaces.