Threshold energy for photogeneration of self-trapped excitons in Si
- 15 May 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (15), 11183-11186
- https://doi.org/10.1103/physrevb.39.11183
Abstract
The excitation spectrum of the 2.8-eV luminescence band of crystalline Si has been measured in a photon energy range between 6 and 14 eV at 77 K. We find that the onset of the 2.8-eV luminescence occurs at 8.3 eV, which is nearly equal to the fundamental optical absorption edge of Si. This result supports strongly the model that the band is due to the radiative recombination of the self-trapped excitons.
Keywords
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