The impurity conductivities of Si:P, Ge:Sb and CdS:Cl
- 14 September 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (17), 3661-3665
- https://doi.org/10.1088/0022-3719/11/17/018
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The Hubbard Model for the Structurally Random SystemJournal of the Physics Society Japan, 1976
- Metal-Nonmetal Transition in Doped SemiconductorsProgress of Theoretical Physics Supplement, 1975
- Electronic Structure of Liquid Metals in the Tight-Binding Approximation. IProgress of Theoretical Physics, 1973
- Nuclear-Magnetic-Resonance Studies of the Semiconductor-to-Metal Transition in Chlorine-Doped Cadmium SulfidePhysical Review B, 1971
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965
- Electron correlations in narrow energy bands III. An improved solutionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1964
- Electron correlations in narrow energy bandsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1963
- Theory of Impurity Band Conduction in SemiconductorsProgress of Theoretical Physics, 1961
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958