Three-transistor-cell 1024-bit 500-ns MOS RAM
- 1 October 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 5 (5), 181-186
- https://doi.org/10.1109/jssc.1970.1050110
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Silicon-gate technologyIEEE Spectrum, 1969
- Computer-aided design and characterization of digital MOS integrated circuitsIEEE Journal of Solid-State Circuits, 1969
- Low power computer memory systemPublished by Association for Computing Machinery (ACM) ,1967