Photoluminescence and photoluminescence excitation study of CuGaTe2
- 15 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (12), 7867-7872
- https://doi.org/10.1063/1.367963
Abstract
Photoluminescence (PL) and photoluminescence excitation measurements over a temperature range 12 K<T<300 K on high quality CuGaTe2 crystals grown by the vertical Bridgman method were completed. The whole PL spectrum consists of two regions. The first region includes PL bands E1 at 1.431 eV, E2 at 1.426 eV, and E3 at 1.417 eV, together with their phonon replicas while in the second region we have a PL band D0 at 1.338 eV with its well-resolved LO-phonon replicas (ℏωLO=26.5 meV). All these PL bands appear to be at higher energy than the lowest (fundamental) band gap energy EgA. The possible origin of observed PL bands is discussed.Keywords
This publication has 16 references indexed in Scilit:
- Investigations on polycrystalline CuGaTe2 thin filmsThin Solid Films, 1997
- AXES1.4 – a program for the preparation of parameter input files for FULLPROFJournal of Applied Crystallography, 1996
- Growth and spectral dependence of the absorption coefficient of CuGaTe2 thin filmsPhysica Status Solidi (a), 1995
- Study of CuGa(Se,Te)2 bulk materials and thin filmsJournal of Applied Physics, 1993
- A comparative study of optical, electrical and structural properties of CuGaSe2 and CuGaTe2 thin filmsSolar Energy Materials and Solar Cells, 1992
- Study of CuGaxIn1 − xSe2 and CuGaxIn1 − xTe2 compoundsJournal of Physics and Chemistry of Solids, 1991
- Fabrication of CuInSe2 single crystals using melt-growth techniquesSolar Cells, 1986
- Electrical properties of CuGaTe2Physica Status Solidi (a), 1983
- Growth and optical properties of CuGaTe2 thin filmsThin Solid Films, 1979
- Electrical and optical properties of CuGaTe2Crystal Research and Technology, 1979