High Resolution Shadow Mask Patterning In Deep Holes And Its Application To An Electrical Wafer Feed-through
- 25 June 1995
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 573-576
- https://doi.org/10.1109/sensor.1995.717289
Abstract
This paper presents a technique to pattern materials in deep holes and/or on non-planar substrate surfaces. A rather old technique, E-beam evaporation of metals through a shadow mask, is used [1]. The realisation of high resolution shadow masks using micromachining techniques is described. Further, a low ohmic electrical wafer feed through with a small parasitic capacitance to the substrate and a high placing density is presented.Keywords
This publication has 2 references indexed in Scilit:
- Fabrication technology for wafer through-hole interconnections and three-dimensional stacks of chips and wafersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile controlJournal of Micromechanics and Microengineering, 1995