Dependence of optimal growth temperature on carbon content in hydrogenated amorphous silicon carbide alloys
- 23 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (17), 1759-1761
- https://doi.org/10.1063/1.102209
Abstract
The temperature (TE) above which optimal growth takes place during plasma-enhanced chemical vapor deposition of undoped hydrogenated amorphous silicon carbide alloys from methane/silane gas mixtures is shown to increase with the relative gas-phase mole fraction of methane XCH4. The increase in TE from ≊220 °C for XCH4=0.0 to ≊350 °C for XCH4=0.90 at 2 W rf power is attributed to a corresponding decrease in the rate of hydrogen diffusion with carbon incorporation.Keywords
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