Multiple-quantum-well reflection modulator using a lifted-off GaAs/AlGaAs film bonded to gold on silicon

Abstract

A normally-off asymmetric Fabry–Perot reflection modulator using a lifted-off GaAs/AlGaAs multiple-quantum-well structure is reported. The 2 μm thick epitaxial layer was bonded to a silicon wafer coated with gold, which served as the rear mirror and as an electrical contact. Modulation ratios of 3.4:1 with 5 V bias and 4.3:1 with 12 V bias were obtained with an insertion loss of 4.3 dB at 12 V.