Raman spectroscopy studies of progressively annealed amorphous Si/Ge superlattices

Abstract

The thermal stability of a-Si/a-Ge superlattices with periods ranging from 2.5 to 41.2 nm has been studied using Raman spectroscopy. Atomic relaxation and rearrangement at the Si/Ge interfaces occur up to an anneal temperature of 300 °C. Further annealing of the superlattices reveals enhanced diffusion and a retarded crystallization, and these effects are more pronounced in short period superlattices.