Absolute Präzisionsbestimmungen von Gitterkonstanten an Silicium-Einkristallen mit Elektroneninterferenzen *

Abstract

Absolute precise determinations of lattice constants by electron diffraction, so far carried out for polycrystals with an accuracy of Δ a/a= ± 3 ·10^-5 are now applied to thin single crystals. This precision is comparable with that of absolute X-ray methods. The factors determining the accuracy of measurement are discussed. — The lattice constants of thin silicon specimens, prepared by a new technique from a solid crystal, show none of the anomalies known from specimens prepared by vacuum evaporation and are in agreement with the value obtained by X-ray diffraction. These specimens therefore can be used as a standard for relative measurements of lattice constants. — The present measurement supports a new value of the conversion constant Λ between X-units and Angstrom units, which has been published (but not yet recommended) in 1965.