Rapid isothermal annealing of ion implantation damage using a thermal radiation source
- 15 October 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (8), 604-606
- https://doi.org/10.1063/1.92818
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Activation of arsenic-implanted silicon using an incoherent light sourceApplied Physics Letters, 1981
- Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulatorsApplied Physics Letters, 1981
- Scanned electron beam annealing of boron-implanted diodesApplied Physics Letters, 1981
- Radiation Annealing of Boron-Implanted Silicon with a Halogen LampJapanese Journal of Applied Physics, 1980
- Shallow junctions by high-dose As implants in Si: experiments and modelingJournal of Applied Physics, 1980
- The solid solubility and thermal behavior of metastable concentrations of As in SiApplied Physics Letters, 1980
- Solar furnace annealing of amorphous Si layersApplied Physics Letters, 1979
- Electron-beam annealing of ion-implantation damage in integrated-circuit devicesJournal of Applied Physics, 1979