Analysis of molecular-beam epitaxial growth of InAs on GaAs(100) by reflection anisotropy spectroscopy
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (4), 1710-1715
- https://doi.org/10.1116/1.586227