Microcavity enhanced vertical-cavity light-emitting diodes

Abstract
We systematically studied microcavity enhancement and mode‐coupling effects in photo‐ and electroluminescence of an AlGaAs/GaAs vertical‐cavity light‐emitting diode (LED) by continuously changing the microcavity resonance with respect to the quantum well band gap. At mode overlap we obtained maximum photo‐ and electroluminescence intensities and a minimum emitted linewidth of 4.6 nm at 836 nm with a FWHM divergence of 62°. However, the electrical‐to‐optical efficiency was less than 1 μW/mA. Application issues for optical interconnects are presented.