Nonalloyed and i n s i t u Ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

Abstract

MBE was used to grow n‐type GaAs layers doped with tin to approximately 5×10¹⁹ cm⁻³. Au/Ge Ohmic contacts were formed on the heavily doped layers without exceeding the eutectic temperature, thereby producing a nonalloyed Ohmic contact. In an in situ metallization experiment, tin was deposited on a freshly grown n⁺⁺ layer. The deposited contact (without any heating) has linear current‐voltage characteristics. Power GaAs FET’s were fabricated with nonalloyed Au/Ge contacts which showed excellent rf and dc characteristics. The combination of MBE n⁺⁺ layer growth and the technology presented here may have potential for microwave devices and GaAs integrated circuits.