Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors
- 5 April 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 20 (5), 289-291
- https://doi.org/10.1109/lmwc.2010.2045597
Abstract
In this letter, we present an amplifier module operating at a frequency of 0.48 THz. This represents almost a 50% increase in solid-state amplifier operating frequency compared to prior state of the art, and is the highest reported amplifier to date. The amplifier demonstrates a peak gain of 11.7 dB measured in a waveguide split-block housing. Sub 50-nm InP HEMT transistors with an estimated f MAX > 1 THz are used to achieve this level of performance. The five stage amplifier is realized in coplanar waveguide, and uses monolithically integrated dipole probes to couple the chip from the WR 2.2 waveguide.Keywords
This publication has 10 references indexed in Scilit:
- A 340–380 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC PackagingIEEE Microwave and Wireless Components Letters, 2009
- A 300 GHz mHEMT amplifier modulePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHzIEEE Transactions on Microwave Theory and Techniques, 2008
- 250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Demonstration of 184 and 255-GHz Amplifiers Using InP HBT TechnologyIEEE Microwave and Wireless Components Letters, 2008
- Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT TechnologyIEEE Transactions on Microwave Theory and Techniques, 2007
- Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Sub 50 nm InP HEMT Device with Fmax Greater than 1 THzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Opening the terahertz window with integrated diode circuitsIEEE Journal of Solid-State Circuits, 2005
- Terahertz technologyIEEE Transactions on Microwave Theory and Techniques, 2002