Formation of Junction Structures by Solid-State Diffusion
- 1 June 1958
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 46 (6), 1049-1061
- https://doi.org/10.1109/jrproc.1958.286843
Abstract
The diffusion of group III and group V impurities into germanium and silicon is reviewed. Observed and possible variations of the diffusion coefficient with concentration are discussed, followed by a summary of the diffusion coefficients and of solutions to the diffusion equation. Finally, methods for the evaluation of diffused layers and diffusion techniques are described.Keywords
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