Low temperature LEED and electric conductivity measurements for cleaved Si(111) surfaces
- 2 September 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 132 (1-3), 73-81
- https://doi.org/10.1016/0039-6028(83)90532-0
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Semiconductor surfacesAdvances in Physics, 1982
- Structure of Ge(111) surfaces obtained by cleavage in superhigh vacuum at low temperaturesSurface Science, 1982
- Non-equilibrium surface state properties at clean cleaved silicon surface as measured by surface photovoltageSurface Science, 1980
- On the correlation of geometrical structure and electronic properties at clean semiconductor surfacesSurface Science, 1977
- On Structural and Electronic Properties of Cleaved Silicon SurfacesJapanese Journal of Applied Physics, 1974
- Atom vibrations on clean and doped (111) silicon surface and on clean (110) GaAs surfaceSurface Science, 1972
- Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and SiPhysical Review B, 1971
- Channel Conductivity of Cleaved and Annealed Germanium SurfacesPhysica Status Solidi (b), 1971
- Correlation between Surface Structure and Surface States at the Clean Germanium (111) SurfaceJournal of Applied Physics, 1969
- Surface states on cleaved (111) silicon surfacesSurface Science, 1966