Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer
- 1 May 2011
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Normally-off GaN transistors for power applications in p-type GaN gate technology with a modified carbon-doped GaN buffer are presented. A combination of an AlGaN back-barrier with the carbon-doped buffer prevents early off-state punch-through. Simultaneously, the on-state resistance could be kept low and the threshold voltage with 1.1 V high enough for secure normally-off operation. 1000 V breakdown strength has been obtained for devices with 6 μm gate-drain spacing. The resulting breakdown scaling slope is 170 V/μm gate-drain distance. The on-state resistance is 7.4 Ωmm. The resulting V Br -to-R ON A ratio (1000 V, 0.62 mΩcm 2 ) is beyond so far reported ratios for normally-off GaN transistors. Modifications of the p-type GaN layer have shown to additionally increase the threshold voltage by 0.4 V without paying a price in the on-state resistance of the device.Keywords
This publication has 7 references indexed in Scilit:
- AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$IEEE Transactions on Electron Devices, 2010
- Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction ConfinementIEEE Transactions on Electron Devices, 2008
- Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity ModulationIEEE Transactions on Electron Devices, 2007
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field PlatesIEEE Electron Device Letters, 2006
- Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applicationsIEEE Transactions on Electron Devices, 2006
- High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatmentIEEE Electron Device Letters, 2005
- Normally-off operation power AlGaN/GaN HFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004