Relation between incremental intrinsic capacitances and transconductances in MOS transistors

1 May 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (5), 946-948
https://doi.org/10.1109/T-ED.1980.19961

Abstract

The ratio of intrinsic substrate and gate capacitances is related to the ratio of substrate transconductance to gate transconductance for a long-channel MOS transistor in strong inversion. It is shown that under certain assumptions the two ratios are approximately equal.

Keywords

CHANNEL MOS
INTRINSIC CAPACITANCES
STRONG INVERSION
LONG CHANNEL
APPROXIMATELY EQUAL
TWO RATIOS
INCREMENTAL INTRINSIC
SUBSTRATE TRANSCONDUCTANCE

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