Abstract
The feasibility for generating high-peak-power ultrashort optical pulses was demonstrated from a highly RF-modulated InGaAsP DC-PBH laser diode at 1.3 μm for the first time. Measured pulse width is found to be approximately 28 ps at 7 mW averaged output power, and peak output power reached about 1.2 W at 210 MHz repetition frequency. Higher peak output and shorter optical pulses could be expected with this type of semiconductor diode laser in the near-infra-red region.