Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications

Abstract

This letter addresses the temperature dependence of some of the electrical properties of 0.2‐μm‐thick SrBi2Ta2O9capacitors with platinumelectrodes on silicon wafers for nonvolatile memory applications. Investigations of the remanent polarization, the nonvolatile polarization and the coercive field with pulse amplitude were made at different temperatures. The endurance of the polarization as a function of temperature is reported. Up to 125 °C, the capacitors show less than a 10% reduction in polarization from their initial values following 1×1012 cycles.