Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applications
- 1 December 1989
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 49 (6), 729-737
- https://doi.org/10.1007/bf00617001
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Atomic layer MBE growth and characterization of AlAsInAs strained layer superlattices on GaAsSuperlattices and Microstructures, 1989
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- Low-Temperature Growth of AlAs/GaAs Heterostructures by Modulated Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Phase-locked RHEED oscillations during MBE growth of GaAs and AlxGa1−xAsJournal of Crystal Growth, 1987
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Atomic layer epitaxyJournal of Applied Physics, 1986
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980