Determination of the argon content of sputtered SiO2 films by X-ray fluorescence
- 31 January 1969
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 3 (1), 35-40
- https://doi.org/10.1016/0040-6090(69)90109-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Gas Incorporation into Sputtered FilmsJournal of Applied Physics, 1967
- Deposition of Tantalum and Tantalum Oxide by Superimposed RF and D -C SputteringJournal of the Electrochemical Society, 1967
- Ion trapping and gas release phenomenaVacuum, 1965
- Nondestructive Determination of Thickness and Refractive Index of Transparent FilmsIBM Journal of Research and Development, 1964
- Bombardment induced re-emission of ionically pumped inert gas from a glass surfaceBritish Journal of Applied Physics, 1962
- Comprehensive study of the ion pumping of the noble gasesBritish Journal of Applied Physics, 1961
- Electrical Cleanup of Gases in an Ionization GaugeJournal of Applied Physics, 1956