LOW-THRESHOLD LOC GaAs INJECTION LASERS
- 15 January 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (2), 43-45
- https://doi.org/10.1063/1.1653554
Abstract
We report new results with the large optical cavity (LOC) injection lasers previously described. It is shown that by narrowing the n region adjacent to the junction, the threshold current decreases without decreasing the differential quantum efficiency. Furthermore, epitaxial growth of all layers was used, and diffusion was avoided. Fabry‐Perot mode threshold current densities as low as 1700 A/cm2 were obtained with differential quantum efficiencies of about 50% and power conversion efficiencies of 20% at room temperature.Keywords
This publication has 8 references indexed in Scilit:
- AN EFFICIENT LARGE OPTICAL CAVITY INJECTION LASERApplied Physics Letters, 1970
- HIGH-ORDER TRANSVERSE CAVITY MODES IN HETEROJUNCTION DIODE LASERSApplied Physics Letters, 1970
- FABRY-PEROT STRUCTURE AlxGa1−xAs INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/cm2Applied Physics Letters, 1970
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970
- Control of Optical Losses in p-n Junction Lasers by Use of a Heterojunction: Theory and ExperimentJournal of Applied Physics, 1970
- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- A technique for the preparation of low-threshold room-temperature GaAs laser diode structuresIEEE Journal of Quantum Electronics, 1969
- Effect of Band Tails on Stimulated Emission of Light in SemiconductorsPhysical Review B, 1966