Polarized fluorescence in α-sexithienyl single crystal at 4.2 K
- 1 May 1998
- journal article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 108 (17), 7327-7333
- https://doi.org/10.1063/1.476151
Abstract
The polarized fluorescence spectra of the bc plane of α-sexithienyl (αT6) single crystal at T=4.2 K have been measured and analyzed. The spectra show a sharp component superimposed on a broad component. The origin of fluorescence at 18332 cm−1 with a rather narrow linewidth (FWHM=8 cm−1) is completely polarized along b. We assign it to a shallow X-trap 18 cm−1 below the bottom of the 1 1Bu exciton band. The 1 1Bu molecular electronic excited level splits in the crystal in four Davydov components (ag, bg, au, and bu) of which au and bu are dipole allowed. The calculated exciton band structure based on the Ewald sums, assuming the point dipole–dipole approximation, predicts two lowest degenerate Davydov components: an au b polarized component and a forbidden ag component. The fluorescence with the intrinsic sharp vibronic progressions is analyzed in terms of ground state totally symmetric modes which are in excellent agreement with Raman scattering data of the single crystal. Sharp c polarized false origins are identified at 18 167, 18 084, and 18 026 cm−1 and discussed either in terms of X-traps or Herzberg–Teller vibronic coupling with the second higher 2 1Bu molecular level polarized along the in plane short axis. A broad c polarized component is attributed to aggregates.Keywords
This publication has 24 references indexed in Scilit:
- Optical and structural properties of oligothiophene crystalline filmsPhysical Review B, 1996
- Comprehensive Evaluation of the Absorption, Photophysical, Energy Transfer, Structural, and Theoretical Properties of α-Oligothiophenes with One to Seven RingsThe Journal of Physical Chemistry, 1996
- Organic Transistors: Two-Dimensional Transport and Improved Electrical CharacteristicsScience, 1995
- Polymorphism and Charge Transport in Vacuum-Evaporated Sexithiophene FilmsChemistry of Materials, 1994
- Orientation and mobility in ultrathin oligothiophene films: UV-Vis, IR and fluorescence studiesSynthetic Metals, 1993
- X-ray determination of the crystal structure and orientation of vacuum evaporated sexithiophene filmsAdvanced Materials, 1993
- Electrical characteristics of field-effect transistors formed with ordered α-sexithienylSynthetic Metals, 1993
- Instability in electrical performance of organic semiconductor devicesAdvanced Materials for Optics and Electronics, 1992
- Location of a 1A g state in bithiopheneThe Journal of Chemical Physics, 1992
- Lowest energy excited singlet state of 2,2′:5′,2′′-terthiophene, an oligomer of polythiopheneThe Journal of Chemical Physics, 1989