Efficient electroabsorption in InGaAsP/InGaAsP MQW optical waveguide

1 January 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (18), 1607-1609
https://doi.org/10.1049/el:19911006

Abstract

Efficient electroabsorption in an InGaAsP/InGaAsP MQW optical waveguide modulator structure is reported. A 17 dB extinction ratio is obtained by applying a 3.5 V drive voltage to a 78 μm long waveguide operating at 1.54 μm under TE-polarisation mode. The on-state attenuation is only 2 dB.

Keywords

EXTINCTION RATIO
3.5 V
ELECTROABSORPTION
78 MICRON
INGAASP-INGAASP
QCSE
1.54 MICRON
SEMICONDUCTORS
TE-POLARISATION MODE
MQW OPTICAL WAVEGUIDE MODULATOR STRUCTURE
DRIVE VOLTAGE
2 DB
ON-STATE ATTENUATION

This publication has 1 reference indexed in Scilit:

Efficient optical waveguide modulation based on Wannier-Stark localization in a InGaAs-InAlAs superlattice
Published by SPIE-Intl Soc Optical Eng ,1991

Cited by 20 articles