Hall effect measurements on InAs nanowires
- 8 October 2012
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 101 (15), 152106
- https://doi.org/10.1063/1.4759124
Abstract
We have processed Hall contacts on InAsnanowiresgrown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.Keywords
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