Properties of MO-CVD-grown GaAs/GaAlAs lasers as a function of stripewidth
- 1 December 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (12), 2310-2316
- https://doi.org/10.1109/jqe.1981.1070737
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Stationary and transient thermal properties of semiconductor laser diodesIEEE Journal of Quantum Electronics, 1981
- Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devicesApplied Physics Letters, 1981
- Buried-heterostructure AlGaAs lasersIEEE Journal of Quantum Electronics, 1980
- Narrow stripe semiconductor laser for improved performance of optical communication systemsFiber and Integrated Optics, 1980
- Study of intensity pulsations in proton-bombarded stripe-geometry double-heterostructure AlxGa1−xAs lasersJournal of Applied Physics, 1979
- Symmetrical and asymmetrical waveguiding in very narrow conducting stripe lasersIEEE Journal of Quantum Electronics, 1979
- Non-Gaussian fundamental mode patterns in narrow-stripe-geometry lasersApplied Physics Letters, 1978
- Threshold characteristics of multimode laser oscillatorsJournal of Applied Physics, 1975
- Threshold temperature characteristics of double heterostructure Ga1−xAlxAs lasersJournal of Applied Physics, 1975
- Resonant modes of GaAs junction lasersIEEE Journal of Quantum Electronics, 1969